Materials for High-Temperature Semiconductor Devices

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Size: 136 pages, 8.5 x 11

Publication Year:1995

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PAPERBACK ISBN-10: 0-309-05335-8 ISBN-13: 978-0-309-05335-8	$34.00	Add to Cart

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Committee on Materials for High-Temperature Semiconductor Devices, Commission on Engineering and Technical Systems, National Research Council
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Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international ...
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Table of Contents
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Front Matter	i-xvi
Executive Summary	1-6	(skim)
Backgorund	7-14	(skim)
State of the Art of Wide Bandgap Materials	15-30	(skim)
Device Physics: Behavior at Elevated Temperatures	31-38	(skim)
Generic Technical Issues Associated with Materials for High-Temperatures...	39-50	(skim)
High-Temperature Electronic Packaging	51-60	(skim)
Device Testing for High-Temperature Electronic Materials	61-64	(skim)
Conclusions and Recommendations	65-70	(skim)
References	71-80	(skim)
Appendix A: Silicon as a High-Temperature Material	81-86	(skim)
Appendix B: Gallium Arsenide as a High Temperature Material	87-92	(skim)
Appendix C: High-Temperature Microwave Devices	93-118	(skim)
Appendix D: Biographical Sketches of Committee Members	119-120	(skim)

Description

Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.

Materials for High-Temperature Semiconductor Devices

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