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Appendix F
Glossary
APD avalanche photodiode
BH laser buried heterostructure laser
BISON broadband integrated services digital network
Bragg cell acousto-optic cell
C3 laser cleaved-coupled cavity laser
CCD charge-coupled device
chirping change of frequency during a pulse interval
CID charge-injection device
CMOS capacity-coupled metal-o~nde silicon devices
CRT cathode-ray tube
DF13 distributed feedback (laser)
DRAM dynamic random access memory
EL electroluminescent
EMI electromagnetic interference
FPA focal plane array
GaAs FET gallium arsenide field effect transistor
GaAs/AlGaAs gallium arsenide/aluminum gallium arsenide
GHz gigahertz
HgCdTe mercury-cadmium telluride
InP indium phosphide
InSb indium antimonide
IR infrared radiation
IRST IR search and track (radar)
LED light-emitting diode
98
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APPENDIX F 99
LiNbO3 lithium niobate
MBE molecular-beam epitaxy
MOCVD metallo-organic chemical vapor deposition
MOS metal-oxide semiconductor
Nd-YAG neodymium-yttrinm-aluminum garnet (laser)
OEIC optoelectronic integrated circuit
PIN photodiode made using three layers composed of p-type,
intrinsic, and e-type semiconductors
SAGM APD separate absorption and graded multiplication avalanche
photodiode
SAM APD separate absorption multiplication avalanche photodiode
SAR synthetic aperture radar
SCBR silicon chip Bragg rejector (laser)
SNR signal-to-noise ratio
TDI time-delay integration
VLSI very large-scale integrated (circuit)
WDM wavelength-division multiplexing
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Representative terms from entire chapter:
apd separate