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Appendix F Glossary APD avalanche photodiode BH laser buried heterostructure laser BISON broadband integrated services digital network Bragg cell acousto-optic cell C3 laser cleaved-coupled cavity laser CCD charge-coupled device chirping change of frequency during a pulse interval CID charge-injection device CMOS capacity-coupled metal-o~nde silicon devices CRT cathode-ray tube DF13 distributed feedback (laser) DRAM dynamic random access memory EL electroluminescent EMI electromagnetic interference FPA focal plane array GaAs FET gallium arsenide field effect transistor GaAs/AlGaAs gallium arsenide/aluminum gallium arsenide GHz gigahertz HgCdTe mercury-cadmium telluride InP indium phosphide InSb indium antimonide IR infrared radiation IRST IR search and track (radar) LED light-emitting diode 98

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APPENDIX F 99 LiNbO3 lithium niobate MBE molecular-beam epitaxy MOCVD metallo-organic chemical vapor deposition MOS metal-oxide semiconductor Nd-YAG neodymium-yttrinm-aluminum garnet (laser) OEIC optoelectronic integrated circuit PIN photodiode made using three layers composed of p-type, intrinsic, and e-type semiconductors SAGM APD separate absorption and graded multiplication avalanche photodiode SAM APD separate absorption multiplication avalanche photodiode SAR synthetic aperture radar SCBR silicon chip Bragg rejector (laser) SNR signal-to-noise ratio TDI time-delay integration VLSI very large-scale integrated (circuit) WDM wavelength-division multiplexing

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