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OCR for page 127
Appendix F
EXAMPLES OF MULTICHIP MODULES
Chip modules have increased over the years in operating capability and
complexity, and the demands on the materials employed have increased
accordingly; these are discussed in Chapter 3. Some examples of multichip
modules are shown in the accompanying figures, E-1 through E-7. These were
based on figures found in the literature] and sketches furnished by IBM and
the General Electric Company. The diversity of detail illustrates that work
in this area is being pursued widely. The figures are presented here as being
representative of the advancements in the state of the art of module design
and manufacture. Many similarities can be discerned.
Johns on, Wayne
Nepcon, p. 655.
1989. Thin Film Multichip Hybrids:
127
An Overview. Proc.
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129
LEAD ,~ - ~ ~ ,
FRAME I ~ SiC
we ~ _) CERAMIC
Sl CON SUBSTRATE
(METALLIZED) MULLITE
\
Figure F-1 Ceramic package developed by Hitachi for Silicon Substrate.
(After Johnson*)
*Wayne Johnson, Proc. Nepcon,
655 (1989)
.
UNSOLDER
ALUMINUM
~ 1
:
\\\\\\\\\\\\\~\\\\\~\\\\\\\\\\\\\\S\\\~\,~,-~,~,~
-
METAL
OXIDE
Figure F-2 Silicon-based multichip module developed by Hitachi for ECL RAM.
(After Johnson*)
*Wayne Johnson, Proc.
Nepcon, 655 (1989~.
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130
CHIP
~ ~ L
w~ w~
POLYIMIOE
SIGNAL
CERAMIC
Figure F-3 Thin film on co-fired ceramic multichip module developed by NEC
(After Johnson*)
*Wayne Johnson, Proc. Nepcon, 655 (1989~.
POWER SIGNAL CONNECTORS
. . _ .
@ =~8
~ 3Oo~o~o~s 888
~ D000O Qua
~ 38880 o
cooug2oa
Fi z ~
~ ~ _~-vO=~ 1 ~-
30~000O 1 - OQUOODOO.
D0000 OUT ~OOOQ AQUA
OCOOO O0Q i OOOQ OO0.
OnO nOOOnQO I°O08OaQaoOO.~!
z' ,,8 ~nnnonnno ' ~9=
W_ .
l
ID
OOGOOOO0Q
oomO 8~9
Of ~ lOO.~Q
OOW.~.Q
ouoosauua
nnn~F,~n~rn
/ ~
Figure F-4 Three-dimensional assembly of GaAs modules developed by NEC.
(After Johnson*)
*Wayne Johnson, Proc. Nepcon, 655 (1989)
.
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131
0>
ADHESIVE
t
POLYIMIC
` COPPER
SILICON SUBSTRATE
IF
.
. . .
AIN SUBSTRATE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . .
.. .. ..; ... . .. . . ...
:: AIN SUBSTRATE
. . ..
... ..
_
rCMOS
EPOXY
POLYIMIDE COPPER
tOVER SILICON)
Figure F-S Multichip module developed by Toshiba. (After Johnson*)
*Wayne Johnson, Proc. Nepcon, 655 (1989~.
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COVER ASSEMBLY ~
132
~ JACKET
on
~ ~HELIUM FILL PORT
~,[
LSI CHIPPED
1
FLANGE:~~9Omm x 90mm
CYLINDER~CC SUBSTRATE
BASE PLATE
Figure F-6 Thermal condition module developed by IBM. (Courtesy of IBMCorp. ~
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133
-1/0 PlN
80ND ~ PWR
/ GND
/
=._~'w-~ - ' ~1
i_
Air
KOVAR I~ ALUMINA
CANSUBSTRAT
FRAME
Figure F-7
Cross section of GE modul
E
(Courtesy of General Electric Co.)
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Representative terms from entire chapter:
multichip module