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PAPERBACK list:$19.00 Web:$17.10 add to cart PDF BOOK your price: $15.00 add to cart Rights & Permissions Free Resources PDF EXECUTIVE SUMMARY Display this book on your site! Related Titles Plasma Science: Advancing Knowledge in the National Interest Condensed-Matter and Materials Physics: The Science of the World Around Us Other Related Titles Beam Technologies for Integrated Processing (1992) National Materials Advisory Board (NMAB) Web Search Builder Use this book's key terms to search within this book, across our collection, or across the Web. Skim This Chapter Skim this chapter and use this chapter's key terms to search within this book. Reference Finder Paste in your own text to find books that relate to your topic. Page 85   E-mail  Facebook  Digg  Stumble  Twitter More The following HTML text is provided to enhance online readability. Many aspects of typography translate only awkwardly to HTML. Please use the page image as the authoritative form to ensure accuracy. APPENDIX A ACRONYMS AND ABBREVIATIONS ac alternating current AI artificial intelligence ARE activated reactive evaporation A/V surface area-to-volume ratio CBE chemical beam epitaxy CBN cubic boron nitride CCVD conventional chemical vapor deposition (also CVD) CVD chemical vapor deposition (also CCVD) CVI chemical vapor infiltration cw continuous wave dc direct current DECR distributed ECR DLC diamond-like carbon DRAM dynamic RAM EB electron beam (also e-beam) ECR electron cyclotron resonance FET field effect transistor FIB focused ion beam FMS flexible machining system GaAs gallium arsenide GSMBE gas-source MBE HBT heterojunction bipolar transistor HEMT high electron mobility transistor HFET heterojunction FET IC integrated circuit IMPATT impact avalanche and transit time IR infrared LACVD laser-assisted CVD LCVD laser CVD LDD low-doped drain LPCVD low-pressure CVD MBE molecular beam epitaxy MMST Microelectronics Manufacturing Science and Technology MOCVD metalorganic CVD MOMBE metalorganic MBE MOS metal-oxide-semiconductor Nd-YAG neodymium-yttrium aluminum garnet PACVD plasma-assisted CVD (also PECVD) PAPVD plasma-assisted PVD PECVD plasma-enhanced CVD (also PACVD) polydiamond polycrystalline diamond Page 85 FRONT MATTER (R1-R12) 1 INTRODUCTION (1-2) 2 SUMMARY AND RECOMMENDATIONS (3-8) 3 BEAM TECHNOLOGIES (9-32) 4 BEAM APPLICATIONS IN MICROELECTRONICS (33-42) 5 BEAM APPLICATIONS IN ENGINEERED MATERIALS (43-70) 6 INTEGRATED PROCESSING (71-80) 7 REQUIREMENTS AND PROBLEMS FOR FURTHER INTEGRATION (81-84) APPENDIX A: ACRONYMS AND ABBREVIATIONS (85-86) APPENDIX B: BIOGRAPHICAL SKETCHES OF COMMITTEE MEMBERS (87-89)

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OCR for page 85
Beam Technologies for Integrated Processing - Report of the Committee on Beam Technologies: Opportunities in Attaining Fully-Integrated Processing Systems APPENDIX A ACRONYMS AND ABBREVIATIONS ac alternating current AI artificial intelligence ARE activated reactive evaporation A/V surface area-to-volume ratio CBE chemical beam epitaxy CBN cubic boron nitride CCVD conventional chemical vapor deposition (also CVD) CVD chemical vapor deposition (also CCVD) CVI chemical vapor infiltration cw continuous wave dc direct current DECR distributed ECR DLC diamond-like carbon DRAM dynamic RAM EB electron beam (also e-beam) ECR electron cyclotron resonance FET field effect transistor FIB focused ion beam FMS flexible machining system GaAs gallium arsenide GSMBE gas-source MBE HBT heterojunction bipolar transistor HEMT high electron mobility transistor HFET heterojunction FET IC integrated circuit IMPATT impact avalanche and transit time IR infrared LACVD laser-assisted CVD LCVD laser CVD LDD low-doped drain LPCVD low-pressure CVD MBE molecular beam epitaxy MMST Microelectronics Manufacturing Science and Technology MOCVD metalorganic CVD MOMBE metalorganic MBE MOS metal-oxide-semiconductor Nd-YAG neodymium-yttrium aluminum garnet PACVD plasma-assisted CVD (also PECVD) PAPVD plasma-assisted PVD PECVD plasma-enhanced CVD (also PACVD) polydiamond polycrystalline diamond

OCR for page 86
Beam Technologies for Integrated Processing - Report of the Committee on Beam Technologies: Opportunities in Attaining Fully-Integrated Processing Systems PVD physical vapor deposition PAPVD plasma-assisted PVD RAMs random access memories RE reactive evaporation rf radio frequency RIBE reactive ion beam etching RIE reactive ion etching SEMI Semiconductor Equipment and Materials Institute SIMS secondary ion mass spectroscopy TACVD thermally assisted CVD TFT thin film transistor UFMP ultrafine metal powders UHMWPE ultrahigh molecular weight polyethylene UV ultraviolet via a conducting through-path perpendicular to the plane of the substrate VLS vapor-liquid-solid

Representative terms from entire chapter:

vapor deposition