The National Academies Press | Open Book THE NATIONAL ACADEMIES PRESS | OPENBOOK
  • Items in cart [0]

    • Osbourn, G.C. 1984. InAsSb strained-layer superlattices for long wavelength detector applications. Journal of Vacuum Science and Technology: Microelectronics Processing and Phenomena B2:176–178.

    Osbourn, G.C. 1986. Recent trends in III-V strained-layer superlattices. Journal of Vacuum Science and Technology B4:142.


    Scribner, D.A., M.R. Kruer, and J.M. Killiany. 1991. Infrared focal plane array technology. Proceedings of the IEEE 79(1):66–85.

    Sze, S.M. 1981. Physics of Semiconductor Devices, second ed. New York: John Wiley & Sons.


    Technology Advances. 1993. Micromachined bolometers may lead to low-cost infrared night-vision systems. Electronic Design 41(25):35.


    Westervelt, R., J. Sullivan, and N. Lewis 1991. Imaging Infrared Detectors. JASON report number JSR-91-600. McLean, Virginia: Mitre Corp.

    Wu, C.S., C.P. Wen, R.N. Sato, M. Hu, C.W. Tu, J. Zhang, L.D. Flesner, L. Pham, and P.S. Nayer. 1992. Novel GaAs/AlGaAs multiquantum-well Schottky-junction device and its photovoltaic LWIR detection. IEEE Transactions on Electron Devices 39(2):234.

    BIBLIOGRAPHY

    Dennis, P.N.J. 1986. Photodetectors: An Introduction to Current Technology. New York: Plenum.


    Göpel, W., J. Hesse, and J.N. Zemel, eds. 1992. Sensors: A Comprehensive Survey. Volume 6: Optical Sensors. New York: VCH.


    Hicks, R.F. 1992. The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride. Proceedings of the IEEE 80(10):1625–1640.

    Hudson, R.D., Jr., and J.W. Hudson, eds. 1975. Infrared Detectors. Stroudsburg, Pennsylvania: Dowden, Hutchinson and Ross.


    Levine, B.F., M.A. Kinch, and A. Yariv. 1990. Comment on "Performance limitations of GaAs/AlGaAs infrared superlattices." (With Reply). Applied Physics Letters 56(23):2354–2355.

    Levine, B.F., K.K. Choi, C.G. Bethea, J. Walker, and R.J. Malik. 1987. New 10 mu-m infrared detector using intersubband absorption in resonant tunneling GaA1As superlattices. Applied Physics Letters 50(16):1092–1094.

    Levine, B.F., C.G. Bethea, G. Hasnain, J. Walker, and R.J. Malik. 1988. High detectivity D*=1.0×1010 cm-Hz1/2/W GaAs AlGaAs multiquantum well Lambda=8.3 mu-m infrared detector. Applied Physics Letters 53(4):296.

    Levine, B.F., C.G. Bethea, G. Hasnain, V.O. Shen, E. Pelve, R.R. Abbott , and S.J. Hsieh. 1990. High sensitivity low dark current 10 mu m GaAs quantum well infrared photodetectors. Applied Physics Letters 56(9):851–853.

    Levine, B.F., C.G. Bethea, K.G. Glogovsky, J.W. Stayt, and R.E. Leibenguth. 1991. Long-wavelength 128 multiplied by 128 GaAs quantum well infrared photodetector arrays. Semiconductor Science and Technology 6(12C):C114–C119.

    Levine, B.F. 1993. Quantum well infrared photodetectors. Applied Physics Reviews 74(8):R1.


    Manasrek, M.O. ed. 1992. Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors. Norwood, Massachussetts: Artech House, Inc.


    NRC (National Research Council). 1988. Process Challenges in Compound Semiconductors. NMAB 446. National Materials Advisory Board, NRC. Washington, D.C.: National Academy Press.

    NRC (National Research Council). 1982. Assessment of Mercury-Cadmium-Telluride. NMAB-377. National Materials Advisory Board, NRC. Washington, D.C.: National Academy Press.

    Nordwal, B.D. 1993. Airports may use IR, magnetic sensors. Aviation Week and Space Technology 139(23):42.

    Norton, P.R. 1991. Infrared image sensors. Optical Engineering 30:1649–1663.


    Scribner, D.A., M.R. Kruer, J.C. Gridley, and K. Sarkady. 1988. Spatial noise in staring IR focal plane arrays. In Proceedings of the SPIE, Vol. 930:56–63. Conference location and date: Orlando, Florida: April 6–7, 1988.


    Roe, D., and D.L. Vincent. 1984. Thermal imaging sensors. National Defense 68(404):28.

    NOTES

    1.  

    The visible portion of the electromagnetic spectrum extends from violet (wavelength of about 0.38 µm) to red (about 0.78 µm).

    2.  

    The near-wavelength infrared region comprises wavelengths of 3–5 µm, the medium-wavelength infrared region wavelengths of 5–7 µm, and the long-wavelength infrared region, 8–14 µm.

    3.  

    It is doubtful if this sensor technology will be widely used in civil applications, regardless of its performance, unless it is relatively inexpensive. Generally speaking, it is easier and less expensive to produce sensors with shorter cutoff wavelengths and lower sensitivity.

    4.  

    In this context "low-cost" means less than $1,000, as opposed to the usual $50,000.

    5.  

    NASA's Jet Propulsion Laboratory has recently reported the development of a bolometer that uses electron-tunneling to achieve microsecond response times.

    6.  

    The band gap is the minimum energy needed to excite a carrier from the valence band to the conduction band.

    7.  

    Comparisons between different detector technologies must therefore be made at a given operating temperature.

    8.  

    Definitive statements about nonuniformity are difficult to make, because nonuniformity can be corrected to some extent by computerized signal processing.

    9.  

    While the temperature of the material can be controlled during detector use, process temperatures are more difficult to control.

    10.  

    However, this latter consideration does not appear to be important for the photo-conductive detectors discussed here.


    The National Academies | 500 Fifth St. N.W. | Washington, D.C. 20001
    Copyright © National Academy of Sciences. All rights reserved.
    Terms of Use and Privacy Statement