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Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
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Page 57
Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
×
Page 58

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ION PROCESSES, NEUTRAL CHEMISTRY, AND THERMOCHEMICAL DATA 57 Some currently available sources of relevant thermochemical data are listed in the references.34 FINDINGS 1. The database for ion-molecule and neutral-neutral chemistry varies considerably. For some species and reactions, the data are good. This is especially true for cases in which there is overlap with processes occurring in the upper atmosphere or in some cases in chemical vapor deposition processes. In other cases, however, most notably for etching processes, few data are available. 2. Thermochemical data are sketchy for many species of interest in plasma processing. These data are important in helping to establish boundaries for reaction pathways and in estimating reaction rate coefficients. Techniques, both experimental and computational, are generally available to obtain these quantities, but few efforts are under way at present to meet these needs. REFERENCES 1. H.W. Ellis et al., Atomic Data and Nuclear Data Tables 7:177 (1976); — 22:179 (1978); — 31:113 (1984). 2. L.W. Sieck and S.G. Lias, "Rate Coefficients for Ion-Molecule Reactions. I. Ions Containing C and H," J. Phys. Chem. Ref. Data 5:1123 (1976). 3. D.L. Albritton, "Ion-Neutral Reaction-Rate Constants Measured in Flow Reactors Through 1977," Atomic Data and Nuclear Data Tables 22:1 (1978). 4. Y. Ikezoe, S. Matsuoka, M. Takebe, and A. Viggiano, Gas Phase Ion-Molecule Reactions Rate Constants Through 1986 (Ion Reaction Research Group of the Mass Spectroscopy Society of Japan). 5. R. Morris, A.J. Viggiano, and J.F. Paulson, J. Phys. Chem. 97:6208 (1993); R. Morris, A.J. Viggiano, J.M. Van Doren, and J.F. Paulson, J. Phys. Chem. 96:3051 (1992). 6. M. Tsuji, T. Fumatsu, H. Kouno, and Y. Nishimura, Chem. Phys. Lett. 192:362 (1992); H. Obase, M. Tsuji, and Y. Nishimura, J. Chem. Phys. 99:111 (1985). 7. D.K. Bohme, "Chemistry Initiated by Atomic Silicon Ions in the Gas Phase: Formation of Silicon Bearing Ions and Molecules," Int. or. Mass Spectrom. Ion Processes 100:719 (1990). 8. M. Mandich and R. Reents, J. Chem. Phys. 95:7360 (1991). 9. R. Johnsen, J. Chem. Phys. 85:3869 (1986). 10. M.E. Weber and P. Armentrout, J. Phys. Chem. 93:1596 (1989); E.R. Fisher and P.B. Armentrout, Int. J. Mass Spectrom. Ion Processes 101:R1 (1990); E.R. Fisher, B.L. Kickel, and P.B. Armentrout, J. Phys. Chem. 97:10204 (1993). 11. B.H. Boo, J.L. Elkind, and P.R. Armentrout, J. Am. Chem. Soc. 112:2803 (1990). 12. J. Moseley, R.E. Olson, and J.R. Peterson, Case Stud. At. Phys . 5:1 (1975). 13. J.B.A. Mitchell, Phys. Rep. 186:215 (1990). 14. J.G. Adams, Int. or. Mass Spectrom. Ion Processes 132:1 (1994). 15. J.S. Chang, R.M. Hobson, Y. Ichikawa, T. Kaneda, N. Maruyama, and S. Teii, J. Phys. B 22:L665 (1989). 16. A. Phelps, J. Phys. Chem. Ref. Data 20:557 (1991); — 21:883 (1992). 17. See, for example, W. Tsang and R.F. Hampson, J. Phys. Chem. Ref. Data 15:1087 (1986); R. Atkinson, D.L. Baulch, R.A. Cox, R.F. Hampson, J.A. Kerr, and J. Troe, J. Phys. Chem. Ref. Data 18:881 (1989); F. Westley, J.T. Herron, R.J. Cventanovic, R.F. Hampson, and W.G. Mallard, NIST Chemical Kinetics Database (1994). 18. M.J. Kushner, J. Appl. Phys. 63:2532 (1988); M.E. Coltrin, R.J. Kee, and G.H. Evans, J. Electrochem. Soc. 136:819 (1989). 19. M.J. Kushner, J. Appl. Phys. 74:6538 (1993). 20. C.J. Guinta, J.D. Chapple-Sokol, and R.G. Gordon, J. Electrochem. Soc. 137:3237 (1990). 21. G. Lucovksy, D. Tsu, and R. Markunas, ch. 16 in Handbook of Plasma Processing Technology, eds. S.M. Rossnagel, J.J. Cuomo, and W.D. Westwood (Noyes Publications, Park Ridge, N.J., 1990). 22. M.J. Kushner, J. Appl. Phys. 71:4173 (1992). 23. D.L. Smith, A.S. Alimonda, and F.J. von Pressig, J. Vac. Sci. Technol. B 8:551 (1990). 24. D.R.F. Burgess, M.R. Zachariah, W. Tsang, and P.R. Westmoreland, NIST Technical Note 1412 (U.S. Department of Commerce, Technology Administration, July 1995). 25. p. Armentrout, Science 251:175 (1991). 26. J.E. Velasco, J.H. Kolts, and D.W. Setset, J. Chem. Phys. 69:4357 (1978).

ION PROCESSES, NEUTRAL CHEMISTRY, AND THERMOCHEMICAL DATA 58 27. H. Chatham, D. Robertson, and A. Gallagher, J. Chem. Phys. 79:1301 (1983). 28. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors (SEMATECH, Austin, Tex., 1994). 29. Y.F. Wang and R. Pollard, J. Electrochem. Soc. 142:1712 (1995). 30. M.W. Chase, Jr., C.A. Davies, J.R. Downey, Jr., D.J. Frurip, R.A. McDonald, and A.N. Syverud, JANAF Thermochemical Tables, 3rd edn., J. Phys. Chem. Ref. Data, suppl. 1 (1985). 31. See, for example, P. Ho and C.F. Melius, J. Phys. Chem. 94:5120 (1990). 32. D.R.F. Burgess, M.R. Zachariah, W. Tsang, and P.R. Westmoreland, NIST Technical Note 1412 (U.S. Department of Commerce, Technology Administration, July 1995); M.R. Zachariah, W. Tsang, P.R. Westmoreland, and D.R.F. Burgess, J. Phys. Chem. 99:12512-12519 (1995). 33. See, for example, J.R. Whetstone et al, White Paper for a Chemical Kinetics Database to Support Integrated Circuit (IC) Manufacture, SEMATECH Technology Transfer #94072443A.XFR (September 1994). 34. M.W. Chase, Jr., C.A. Davis, J.R. Downey, Jr., D.J. Frurip, R.A. McDonald, and A.N. Syverud, JANAF Thermochemical Tables, 3rd edn., J. Phys. Chem. Ref Data 14, suppl. 1 (1985) [see NIST/SRD Products Catalogue SP 782 for hard-copy, floppy disk, and on-line versions of this and other databases]; L.V. Gurvich et al., Thermodynamic Properties of Individual Substances, 3rd edn. (English) (Nauka, Moscow, 1978) [similar to JANAF, this reference summarizes rules for estimating thermochemical data from structure]; S.G. Lias, J.E. Bartmess, J.F. Liebman, J.L. Holmes, R.D. Levin, and W.G. Mallard, "Gas-Phase Ion and Neutral Thermochemistry," J. Phys. Chem. Ref. Data 17, suppl. 1 (1988) [see NIST/SRD SP 782 for an updated version on floppy disk]; R.J. Kee, F.M. Rupley, and J.A. Miller, The Chemkin Thermodynamic Data Base, Sandia National Laboratories Report SAND87-8215B (1990) [specific heats, standard state enthalpies, and entropies of species and reactions related to combustion and to CVD of silicon from silane; part of the Chemkin chemical kinetics code; available from the authors; also see Report SAND89-8009B (1993)]; M.E. Jacox, "Vibrational and Electronic Energy Levels of Polyatomic Transient Molecules," J. Phys. Chem. Ref. Data monograph 3 (American Chemical Society, Washington, D.C., 1994); K.P. Huber and G. Herzberg, Constants of Diatomic Molecules (Van Nostrand, New York, 1979).

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In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable.

Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.

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