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Appendix C: Electronic Materials
Pages 31-35

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From page 31...
... Bulk crystals serve as substrates for epitaxial-film deposition and/or CHAPTER 4 growth and in limited applications for the direct processing of devices and APPENDIX A integrated circuits. The major research questions here include contamination and APPENDIX B gettering effects, compositional uniformity, wafer surface flatness and/or defects, APPENDIX C and electrically active, structural micro-defects.
From page 32...
... However, the work reported here does contribute to our basic understanding of bulk crystal growth processes, both through theoretical studies of heat and mass transport as well as the experimental study of model systems. The paradigm for these studies is use of the microgravity environment to decouple the interferences of gravitationally driven fluid flows from the effects produced by other forces.
From page 33...
... During epitaxial growth, forced convection is used very successfully to improve compositional control, and there is no need to resort to the complex control of bulk melt thermal and solutal parameters; hence, it is unnecessary to use the microgravity environment to study or enhance the crystal growth of these solid solution materials. Vapor Growth Vapor growth of the HgI2,GeSe, and HgCdTe systems has been studied in detail.
From page 34...
... There is a weak relationship between the properties of the bulk substrate and the epitaxial film. However, the major research issues relate to control of the atomic layer required in epitaxial film growth.
From page 35...
... The microgravity program should emphasize processing science and deemphasize categorization of activities by disciplinary areas, such as microelectronics, for which the contributions must be judged against a far more comprehensive scientific base. Last update 7/13/00 at 1:56 pm Site managed by Anne Simmons, Space Studies Board file:///C|/SSB_old_web/cmgr92appendc.htm (5 of 6)


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